Mike Harris
Microelectronics and Nanotechnology Chief

 

mike.harris@gtri.gatech.edu
Phone: 404-407-6015
Fax: 404-407-9015 


Electro-Optical Systems Laboratory
Georgia Tech Research Institute
925 Dalney Street
Atlanta, GA 30332-0810

Mike Harris
Microelectronics and Nanotechnology Chief

 

mike.harris@gtri.gatech.edu
Phone: 404-407-6015
Fax: 404-407-9015 


Electro-Optical Systems Laboratory
Georgia Tech Research Institute
925 Dalney Street
Atlanta, GA 30332-0810

Background

Education

1980  Master of Science, Electrical Engineering

    Georgia Institute of Technology

 

1974  Bachelor of Science, Electrical Engineering

   Georgia Institute of Technology

 

Employment History

 

1994-Present  Principal Research Engineer

    Georgia Institute of Technology

 

1986–1994  Senior Research Engineer
    Georgia Institute of Technology

 

1980–1986  Research Engineer II
    Georgia Institute of Technology
 

1976–1980  Research Engineer I
    Georgia Institute of Technology
 

1974–1976  Senior Reliability Engineer
    Harris Semiconductor
    USA

 

1973–1974  Student Assistant
    Georgia Institute of Technology

 

Experience Summary

 

As Division Chief, manages research activities of more than twenty staff members. Manages GTRI's microelectronics clean room facility. As Principal Research Engineer, manages programs associated with integrated circuit investigations as well as fabrication, assembly, performance evaluation, and failure analysis of mircrowave semiconductor devices. Led a team of researchers investigating packaging solutions for high power transmit/receive modules. Designed mask sets and developed fabrication processes for GaAs metal semiconductor filled effect transistors (MESFETs). Developed fabrication processes for gallium nitride (GaN) high electron mobility transistors HEMTs. As Senior Reliability Engineer at Harris Semiconductor, coordinated stress test and failure analysis of memory and digital CMOS circuits and bipolar memory circuits. Had subtask responsibilities for special products program designed to meet military requirements.

 

Current Fields of Interest

 

Transmit/receive (T/R) module technology for phased array radars, monolithic microwave integrated circuits, gallium nitride (GaN) power device development, microwave packaging, semiconductor materials development, integrated processes and analysis related to microwave devices and circuits. Photonic components and circuits. RF and optical MEMs switches. Thermal analysis and thermal management of electronic components. 

 

Certifications, Affiliations & Special Honors

 

Member, Eta Kappa Nu

 

Registered Professional Engineer, Georgia

 

Fellow, Institute of Electrical and Electronics Engineers

 

Member, Tau Beta Pi

 

Member, Phi Theta Kappa

 

Reports & Publications 

  1. "1. GaN-Based Next Generation Module (NGM) for Ground-based Midcourse Defense Radars, Final Technical Report, A5889-260 Contract DASG60-99-C-0006 Task 260, October 2003.," ()

  2. "4. High-frequency noise in AlGaN/GaN HFETs, Nuttinck, S.; Gebara, E.; Laskar, J.; Harris, M.; IEEE Microwave and Wireless Components Letters, Vol. 13, Issue: 4, April 2003, Pages: 149 -151.," ()

  3. "5. Improved RF modeling techniques for enhanced AlGaN/GaN HFETs, Nuttinck, S.; Gebara, E.; Laskar, J.; Shealy, J.; Harris, M.; Microwave and Wireless Components Letters, Vol.13, Issue: 4, April 2003, Pages: 140-142.," ()

  4. "7. RF Performance and Thermal Analysis of AlGaN/GaN Power HEMTs in Presence of Self-Heating Effects, IEEE MTT-S 2002 International Microwave Symposium Technical Digest, pp. 921-924, June 2002, S. Nuttinck, E. Gebara, J. Laskar and B. Wagner.," ()

  5. "8. Development of GaN wide bandgap technology for microwave power applications, Nuttinck, S.; Gebara, E.; Laskar, J.; Harris, M., Microwave Magazine, IEEE, Volume: 3, Issue: 1, March 2002 Pages: 80 - 87.," ()

  6. "21. Design and Implementation of a Microwave Materials Database, 1998 IEEE International Microwave Symposium Digest Vol. 3 pp. 1827-30, with C. Lesniak, C. Erichsen and M. Dobbs.," ()

  7. "22. Reliability Analysis & Product Improvement Support for HBTs, Final Technical Report, A5426, Contract No. DAAH01-92-D-R005, Delivery Order 0047, September 1997.," ()

  8. "9. Study of Self-Heating Effects and Temperature-Dependent Modeling And Pulsed Load-Pull Measurements on GaN HEMTs, IEEE Trans. on Microwave Theory and Techniques, Vol. 49, No 12, pp 2579-2587, Dec. 2001, with S. Nuttinck, E. Gebara, and J. Laskar. ," ()

  9. "10. Engineering Support for High Power Density Gallium Nitride Microwave Transistors, A6113, Contract N000014-99-1-1100, December 2001.," ()

  10. "19. Foreign Technology Assessment of MMICs, Final Technical Report, A5430, Contract No. Contract DASG60-97-C-0020, Subcontract GRA-97-C-0020-2, June 1998.," ()

  11. "20. "Development of Cryogenic Load-Pull Analysis: Power Amplifier Technology Performance Trends," 1998 IEEE International Microwave Symposium Digest Vol. 3 pp. 1663-66, with E. Gebara, J. Laskar and T. Kikel.," ()

  12. "67. "Low Noise GaAs FET Phase II," Final Technical Report, P. O. No. S8-879406-LPY, July 1984," ()

  13. "68. "Microcircuit Device Specifications," Final Technical Report, SC 7037, July 1983 with P. A. Maresca," ()

  14. "69. "Exploitation of Foreign Hardware," Final Technical Report, Contract No. 82-N768800-000, November 1982," ()

  15. "70. "Low Noise GaAs FET Phase I," Final Technical Report, P. O. No. S8-738214-LLR, September 1982," ()

  16. "56. "GaAs MESFETS Breathe Life Into Amplifier Design," Microwaves and RF, pp. 111-114, (July 1987), with R. K. Feeney and D. W. Hughes," ()

  17. "12. Underlying Physics- Material Properties, Semiconductors, Harris, H.M. in The RF and Microwave Handbook (M. Gollio, Ed.), CRC Press (2001).," ()

  18. "12. Underlying Physics- Material Properties, Semiconductors, Harris, H.M. in The RF and Microwave Handbook (M. Gollio, Ed.), CRC Press (2001).," ()

  19. "14. Development of Temperature Dependent Load-pull Analysis Techniques, GaAs99, Munich Germany, October 1999, with E. Gebara, D. Heo, J. Laskar.," ()

  20. "15. Full Two-dimensional Electroluminescent Analysis of GaAs/AlGaAs HBTs, 1999 International Reliability Physics Symposium Proceedings, pp. 121-127, March 1999, with B. Wagner, S. Halpern, M. Dobbs, C. Pagel, B. Stuffle, J. Henderson, and K. Johnson. ," ()

  21. "16. Development of Cryogenic Measurement Techniques for Microwave Power Amplifiers, 33rd Intersociety Engineering Conference on Energy Conversion, Colorado Springs, CO, August 2-6, 1998, with J. Laskar, E. Gerbara and T. Kikel.," ()

  22. "43. "Advanced III-V Materials for Microwave and Millimeter Wave Integrated Circuits," Proceedings of the Second Workshop on Electro-Optic Materials, IIT Research Institute, Chicago, IL, (October 1991), with D. W. Hughes and A. Torabi," ()

  23. "44. "Evaluation of New Multiple Quantum Well Avalanche Photodiode Structures: The Doped Barrier and Doped Quantum Well Photodiode," GaAs and Related Compounds, (11 September 1991), with P. Aristin, A. K. Garrison, C. J. Summers and A. Torabi," ()

  24. "3. High temperature performances of AlGaN/GaN power HFETs, Nuttinck, S.; Banerjee, B.; Venkataraman, S.; Laskar, J.; Harris, M.; Microwave Symposium Digest, 2003 IEEE MTT-S International, Vol. 1, 8-13 June 2003, Pages: 221 - 223.," ()

  25. "40. "Optimizing n Ohmic Contacts on GaAs for HEMTs," Materials Research Society, Spring Meeting Symposium C, San Francisco, CA, 29 April 1992, with Jeff Farley," ()

  26. "41. "Dislocation Based Mechanisms in Electromigration," 30th Annual Proceedings Reliability Physics, (31 March 1992), pp. 217-277, with A. K. Garrison, J. L. Hubbard and B. R. Livesay," (31 March 1992)

  27. "71. "Advanced Exploitation of Foreign Integrated Circuits," Final Technical Report, Contract No. F-33615-80-C-1139, November 1981, with P. A. Maresca," ()

  28. "72. "Millimeter Wave Mixer Diode," Final Technical Report, Project No. A-2566, January 1981, with G. N. Hill," ()

  29. "73. "Exploitation of Foreign Integrated Circuits," Final Technical Report on Contract No. F33615-78-C-1471, June 1979, with N. W. Cox," ()

  30. "26. H.M. Harris and A. Torabi, PHEMT Material Reliability Testing, Final Technical Report, A9913, Contract No. DAAH01-92-D-R005, Delivery Order 0028, November 1995.," ()

  31. "27. Pseudomorphic High Electron Mobility Transistor (PHEMT) Reliability, Final Technical Report, A9580, Contract No. DAAH01-92-D-R005, Delivery Order 0020, March 1994.," ()

  32. "32. "Pseudomorphic High Electron Mobility Transistor (PHEMT) Reliability," Final Technical Report A-9580, Contract No. DAAH01-92-D-R005, Delivery Order 0020, March 1994, with A. Torabi," ()

  33. "33. "Effects of Long Term Storage on Electronic Devices," Final Technical Report A-9430, Contract No. DAAA21-92-D-008, January 1994, with Philip Wilson," ()

  34. "74. "Underwater Electronic Systems Investigations," Final Technical Report on Contract No. N61339-75-C-0122, May 1979, with J. E. Rhodes, D. K. Plummer and others," ()

  35. "75. "IMPATT Diode Chip Level Combining," Final Technical Report on Contract No. F33615-75-C-1020, May 1978, with N. W. Cox, C. T. Rucker and others," ()

  36. "17. Optimal Cooling, 7th Annual AIAA/BMDO Technology Readiness Conference, Colorado Springs, CO, August 3-6, 1998, with J. Laskar, T. Kikel, R. Deliberis and I. Merritt.," ()

  37. "18.  Assessment of Russian Research and Development on Silicon Carbide Materials and Devices, Final Technical Report A-5542, Contract No. 97-C-2016, June 1998.," ()

  38. "23. Material Characterization and Testing, Final Technical Report, A9629, Contract No. F33615-94-C-1404, June 1997, with C. Rucker and R Martin.," ()

  39. "24. HBT Material Reliability Testing, Final Technical Report, A5001, Contract No. DAAH01-92-D-R005, Delivery Order 0037, August 1996.," ()

  40. "25. Factors Limiting the Reliability of Pseudomorphic High Electron Mobility Transistor (PHEMT) Materials, Devices and Circuits, 1996 Government Microcircuit Conference, Orlando, FL, March 1996, with K. Johnson and B. Stuffle.," ()

  41. "57. "GaAs Monolithic IC Design and Fabrication Phase II," Final Technical Report, Project A3459, December 1986," ()

  42. "61. "Environmental Interactions Leading to Degradation of IC Materials," presented at the 1985 Producibility of Microwave and Millimeter Integrated Circuits Conference, November 1985, with B. R. Livesay," ()

  43. "62. "Fiber Optic Signal Processor," Final Technical Report on Contract No. F08635-84-K-0260, October 1985, with B. S. Bostater and E. O. Rausch," ()

  44. "63. GaAs Monolithic Integrated Circuit Design and Fabrication Phase I," Final Technical Report, Project A3814, September 1985," ()

  45. "64. "Fabrication of Prototype Hybrid Circuits," Final Technical Report, SC 7288, June 1985," ()

  46. "30. "Characterization of Electronic Microcircuits," Final Technical Report A-9614, Subcontract 820394, Contract No. DAAH01-90-D-A003-10, June 1994," ()

  47. "36. "Power Combining Arrays at Ka-Band," Proceedings from the Workshop on Millimeter Wave Power Generation and Beam Control, (September 1993), with D. W. Griffin, S. M. Halpern, R. W. McMillan, C. J. Summers, A. Torabi and J. C. Wiltse," ()

  48. "48. "Heterostructure Solid State Sources," Final Technical Report, STGC Project E904-009, June 1989, with A. Torabi," ()

  49. "49. "Si Planar Doping of GaAs," J. Vac. Sci. Technol. A7 (3), pp. 1329-1333, (May/June 1989), with R. B. Haugen, C. J. Summers and A. Torabi," ()

  50. "50. "High Electron Mobility Transistors for Millimeter Wave Applications," Conference Record Southcon 89, pp. 90-93, (March 1989)," ()

  51. "51. "High Electron Mobility Transistors for Millimeter Wave Applications," presented at the Southcon 89 Electronics Show and Convention, Atlanta, Georgia, March 1989, with A. Torabi," ()

  52. "58. "An Equivalent Circuit for a 70 Mil Microstrip Package," Microwave Journal, (August 1986), with D. W. Hughes and C. T. Rucker," ()

  53. "59. "Low Noise GaAs Field Effect Transistors for Monolithic Microwave Integrated Circuits," Bulletin of the American Physical Society, (January 1986), with D. W. Hughes," ()

  54. "28. Quasi-Optical Power Combining Arrays at Ka-Band, Third International Conference on Millimeter Wave and Far Infrared Technology (ICMWFST94), Guangzhou, China, August 1994, with A. Torabi, R. McMillan, C. Summers, J. Wiltse, and S. Halpern.," ()

  55. "29. A Materials Database for Microwave Packaging Design, IEEE Topical Meeting on Electrical Performance of Electronic Packaging, Monterey, CA, November 1994, p 151-153.," ()

  56. "39. "New Insight Into Electromigration," Semiconductor International, August 1992, p. 11, with A. K. Garrison, J. L. Hubbard and B. R. Livesay," ()

  57. "45. "Beam Deflection Concept for a Vacuum Microelectronic Microwave Amplifier," Proceedings of the 4th International Vacuum Microelectronics Conference, (22-24 August 1991), with R. K. Feeney, D. N. Hill, D. W. Hughes and W. L. Ohlinger," ()

  58. "46. "III-IV MESFET and HEMT Research at the Georgia Tech Research Institute," III-V Review 4, (2), (April 1991), pp. 28 and 30," ()

  59. "52. "Transmit/Receive Module Technology," Final Technical Report, Project Contract No. F30602-85-C-0295, November 1989, with D. W. Hughes ," ()

  60. "54. "Resonant Tunneling and Negative Differential Resistance in a Variably Spaced Superlattice Energy Filter," Applied Physics Letters 52 (2), pp. 132-134, (11 January 1988), with K. F. Brennan, C. J. Summers and A. Torabi," ()

  61. "37. "Quasi-Optical Power Combining of Solid State Sources in Ka-Band," 1993 IEEE MTT-52 International Microwave Symposium Digest 1, pp. 159-162, (June 1993), with D. W. Griffin, S. M. Halpern, R. W. McMillan, C. J. Summers, A. Torabi and J. C. Wiltse," ()

  62. "38. "Oscillator for Quasi-Optical Power Combining at 37 GHz," in Proceedings from the Fourth International Symposium on Space Terahertz Technology, pp. 80-93, (March 1993), with S. M. Halpern, R. W. McMillan, C. J. Summers, A. Torabi and J. C. Wiltse," ()

  63. "42. "Fabrication and Characterization of Monolithic Microwave Integrated Circuits," Interim Technical Report Project A-8608, December 1991," ()


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