EOSL conducts microelectronics and nanotechnology research on compound semiconductors that include gallium arsenide (GaAs) and gallium nitride (GaN). Molecular beam epitaxy (MBE) is our main semiconductor growth technique. We have developed processes to fabricate MESFET, PHEMT and other compound semiconductor devices. Our lab has the expertise and facilities, including a dedicated 3,000 sq. ft. Class 100 clean room, to dice, assemble, package and test devices and circuits that operate into the millimeter wave frequency range.
We have a long history of providing support in the area of transmit/receive (T/R) modules for radar and communications applications. We also have demonstrated experience in electrical and thermal simulation of advanced devices. EOSL performs additional research in the area of phosphor technologies and has extensive facilities for powder and thin film phosphors. Nanotechnology is another emerging area of research here, and our focus is on carbon nanotubes and related applied nanotechnology projects.
Our areas of expertise include:
In addition, the Microelectronics and Nanotechnology Group is assosicated with these Centers of Excellence: